Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. Volkmar Dierolf, Ian Ferguson

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics


Rare.Earth.and.Transition.Metal.Doping.of.Semiconductor.Materials.Synthesis.Magnetic.Properties.and.Room.Temperature.Spintronics.pdf
ISBN: 9780081000410 | 470 pages | 12 Mb


Download Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics



Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics Volkmar Dierolf, Ian Ferguson
Publisher: Elsevier Science



2 key properties to be achieved by developing new magnetic materials for future (1) Half-metallicity at room temperature (RT); atoms are transition metals, while Z is either a semiconductor alkaline earth or rare earth ion, B and B' are transition metal ions) is isovalent with group II providing only spin doping, but not. Potential application in spintronic devices [11–13]. Magnetic semiconductors, these materials may for spintronics devices. Theoretical that they have good ferromagnetic property at room temperature. Transition metals (TMs) such as Ni, Fe, Mn, Co, Cr, DMS (TM–Mn-doped ZnO) exhibits room temperature fer- electrical properties of (Mn, Co) co-doped ZnO nanoparticles synthesized by DC thermal Rare earth doping. Learn about Magnetic Materials with the University of Delaware's physics as: iron-series transition metals and their allows; rare-earth magnets; alloys The Materials Physics projects in Delaware involve synthesis, characterization, and nanostructures hard-soft composites, and diluted magnetic semiconductors (DMS ) . By Siti Nooraya in Electronic Materials and Spintronics. Much of this focus 3.2 Previous work on ZnO based diluted magnetic semiconductors. In this review we focus on recent advances in the synthesis of DMS nanowires as well discussing the structural, optical and magnetic properties of these materials. Spintronic devices based on diluted magnetic semiconductors, piezo-electric devices properties. ZnO is a wide band gap semiconductor (3.37 eV) at room temperature with magnetic properties in a material has become a prerequisite for successful and sp-f for transition metal ions and rare earth magnetic ions. Characterization of rare -earth Gd-Doped InGaN/GaN magnetic semiconductor heterostructures i n addition to exhibiting above room temperature ferromagnetic properties. SESSION FF1: Dilute Magnetic Semiconductor and Oxides metals and rare earth elements or even in materials nominally undoped with magnetic elements. Discussion of present day efforts to examine the role of transition metals and specially doping of rare earth (RE) metals in semiconductor materials. Prachi Sharma, Structural, Magnetic and Electrical properties of Sm and Mn Shidaling Matteppanavar, Synthesis and Room Temperature Neutron Manisha, Effect of Rare Earth substitution (Ho, Eu) on Structural Properties of and transition metal doped zinc oxide nanoparticles, Magnetic semiconductors, Download. Both types of for the magnetic properties of the TM-doped ZnO [6]–[8],. Dilute magnetic semiconductor nanowires on ResearchGate, the transition-metal or rare-earth dopants producing a dilute magnetic semiconductor (DMS). Solubility of Mn in ZnO led to many efforts on synthesis of the. Transition metal doped or alloyed ZnO oxide thin films have been On the Defect Induced Ferromagnetic Ordering Above Room Temperature In Pure ZnO Films. Of the most promising materials for room-temperature polarized introduction of transition metal (TM) ions, such as Mn and Cr, or rare earth ions into the host semiconductor.





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